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The Application of Advanced Nano-Techniques in Failure Analysis for Different Failure Mechanism

机译:高级纳米技术在不同故障机制失效分析中的应用

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With multi-metal layers and scaling down we occurred many difficulties in FA (Failure Analysis). Failure isolation for FA has more challenge with smaller defects and process changes. Conventional FA techniques couldn't meet need of analysis, so the advanced nano-techniques must be developed and applied in FA[1]-[2]. By characterizing the electrical behavior on devices, these FA techniques (for example nanoprobing, EBAC, C-AFM, etc) precisely locates defects before any PF A is performed and allows for deeper understanding of the root cause. Nanoprobing are commonly utilized to measure electrical characterization with nanoscale area and under-layer circuit in F A lab. EBAC applications are to locate the high resistance, open circuit of interconnection, the connected path of a circuit, etc. The main application of Conductive Atomic Force Microscope (C-AFM) for high/low resistance and junction leakages differentiation had proven to be very useful in determining the failure mechanism. In this paper, the principle of advanced FA nano-techniques were introduced simply. Then three real cases with different failure mechanism were shared with applying these nano-techniques. In first case nanoprobing help to confirm resistive/open failure; in second case EBAC analysis revealed short failure between adjacent metal lines; in third case C-AFM technique was applied to find out implant/crystal defect which caused timing delay failure.
机译:随着多金属层和按比例缩小的,我们在FA(失效分析)发生了许多困难。为FA故障隔离与更小的缺陷和工艺的变化更多的挑战。常规FA技术不能满足需求分析的,所以先进的纳米技术,必须开发和应用FA [1] - [2] 。通过表征上的设备的电特性,这些FA技术(例如nanoprobing,EBAC,C-AFM等)精确地定位任何PF A之前的缺陷被执行并且允许根本原因的更深入的了解。 Nanoprobing通常用来测量与F A实验室纳米级区和下层电路电学表征。 EBAC应用是定位高电阻,互连的开路,电路的连接路径等导电原子力显微镜(C-AFM)的高/低电阻的主要应用和结泄漏分化已被证明是非常在确定失效机理是有用的。在本文中,先进的FA纳米技术的原理进行了简单介绍。然后用不同的失效机制三个实例与应用这些纳米技术共享。在第一种情况下nanoprobing有助于确定电阻/断路故障;在第二种情况下EBAC分析揭示相邻金属线之间的短路故障;在第三种情况下C-AFM技术应用于以找出哪些引起定时延迟故障植入物/晶体缺陷。

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