Application to a Failure Analysis of Ultrasonic Beam Induced Resistance Change (SOBIRCH)

摘要

Failure analysis of the semiconductor device has the demand that the inspection should be performed without mold decapsulation. Conventional PEM(Photo Emission Microscope) and IR-OBIRCH(InfraRed Optical Beam Induced Resistance CHange) cannot analyze in package state because the emission light and stimulation light for IR-OBIRCH cannot be transmitted through package mold. We developed new technique for package failure analysis based on ultrasonic stimulation. We named this technique as SOBIRCH(ultraSOnic Beam Induced Resistance Change). In this report, we describe the detection example of actual package IC and multilayer chip.