Surface Electrode Ion Trap Developed and Improvement by Oxide- First- Metal-Last Approach for High Performance Quantum Computing

摘要

Oxide-First-Metal-Last (OFML) approach was developed and implemented for surface electrode ion trap after different fabrication approaches evaluation. Surface electrode ion trap was fabricated on the high resistivity wafer after lithographic process optimization and metal electrode corrosion troubleshooting. Less than l0E-¹²A leakage current between surface electrodes was achieved when swept voltage from -l00V to l00V.