Analytical Model of Band-to-Band Tunneling in ATLAS-TFET

摘要

The Atomically Thin and Layered Semiconducting-channel Tunnel Field Effect Transistor (ATLAS-TFET) is a recent development from the conventional TFET that shows a sharp transition from off to on and has an exceedingly low subthreshold swing (SS) with minimum recorded value of 3.9 millivolts per decade. In this paper, a semiclassical analytical model of the tunneling current of this device is derived. The electric field and charge concentration is calculated by solving Poisson's equation. The generation current is then obtained using Kane's generation model for band-to-band tunneling (BTBT) along with maximum electric field approximation (MEFA). Quantum mechanical factors are incorporated in our model using necessary correction factors. The values obtained from this model are plotted along with the experimental data and the results are found to be very similar.