Performance Investigation of Ga2O3 semiconductor based schottky diode for RF application

摘要

In this paper includes, studied about the properties of Ga2O3 semiconductor ultra wide bandgap and Ga2O3 semiconductor-based schottky diode performance investigation for RF application were studies. Schottky barrier diode has contact that the fabricated gallium oxide single-crystal substrate develops on the edge-defined film fed method and uses another schottky electrodes (Pt, Au, and Ni). The performance evolution result obtained is also compared between the different work functions and schottky electrodes doping concentration. Proportionally measured characteristics of forward bias current-voltage (I-V) and capacitance-voltage(C-V). The devices show good Current-voltage characteristics at a barrier height are zero (a perfect ohmic contact) and the characteristics of frequency-dependent capacitance characteristic show good output at 1MHz. The result has been simulated using the 2D simulator of Silvaco ATLAS.