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M3D-ADTCO: Monolithic 3D Architecture, Design and Technology Co-Optimization for High Energy Efficient 3D IC

机译:M3D-ADTCO:高能效3D IC的单片3D架构,设计和技术共同优化

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Monolithic 3D (M3D) stands now as the ultimate technology to side step Moore’s Law stagnation. Due to its nanoscale Monolithic Inter-tier Via (MIV), M3D enables an ultrahigh density interconnect between Logic and Memory that is required in the field of highly energy efficient 3D integrated circuits (3D-ICs) designed for new abundant data computing systems. At design level, M3D still suffers from a lack of commercial tools, especially for Place and Route, precluding the capability to provide signoff M3D GDS. In this paper, we introduce M3D-ADTCO, an architecture, design and technology co-optimization platform aimed at providing signoff M3D GDS. It relies on a M3D Process Design Kit and the use of a commercial Place and Route tool. We demonstrate an area reduction of 23.61 % at iso performance and power compared to a 2D RISC-V micro-controller based System on Chip (SoC) while creating space to increase (2x) the RISC-V instruction memory.
机译:如今,单片3D(M3D)成为克服摩尔定律停滞的终极技术。由于其纳米级的单片层间过孔(MIV),M3D可以实现逻辑和内存之间的超高密度互连,这是为新型丰富数据计算系统设计的高能效3D集成电路(3D-IC)领域所必需的。在设计级别,M3D仍然缺乏商用工具,尤其是对于“放置和布线”而言,这缺乏提供签名M3D GDS的能力。在本文中,我们介绍了M3D-ADTCO,这是一种旨在提供签发M3D GDS的体系结构,设计和技术共同优化平台。它依赖于M3D流程设计套件以及商用的布局布线工具的使用。与基于2D RISC-V微控制器的片上系统(SoC)相比,我们展示了在iso性能和功耗上减少了23.61%的面积,同时创造了增加(2x)RISC-V指令存储器的空间。

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