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Density Functional Theory Studies of Vacancies in Penta-Graphene Nanoribbons

机译:五边形石墨烯纳米带中空位的密度泛函理论研究

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We use the first principal pseudopotential calculations combined with the generalized gradient approximation to investigate the structural, magnetic and electronic properties of defective penta-graphene one dimensional monolayer. Our calculations predict that, the equilibrium geometrical structure with a single vacancy defect shows a substantial reconstruction of atomic positions. The magnetic and electronic properties of penta-graphene nanoribbons can be adjusted by single vacancy defect The electronic bandgap depends on the ribbon width as well as on the single vacancy location relative to the ribbon edge. The formation energy of a single vacancy in penta-graphene nanoribbon is found to be 8.4 eV in the central region of the ribbons and decreases to 7.1 eV when the vacancy location is closer to the ribbon edge. Our results for a stable penta-graphene nanoribbon with a controllable bandgap is promising for nanoelectronic devices
机译:我们使用第一个主要的伪电势计算与广义梯度近似相结合,来研究有缺陷的五石墨烯一维单层膜的结构,磁性和电子性质。我们的计算预测,具有单个空位缺陷的平衡几何结构显示出原子位置的实质重建。可以通过单个空位缺陷来调节五石墨烯纳米带的磁性和电子性能。电子带隙取决于带的宽度以及相对于带边缘的单个空位。在碳带的中心区域发现五石墨烯纳米带中的单个空位的形成能为8.4 eV,当空位位置更靠近碳带边缘时,其形成能降低至7.1 eV。我们的具有可控带隙的稳定五石墨烯纳米带的研究结果对于纳米电子器件是有希望的

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