首页> 外文会议>IEEE International Ultrasonics Symposium >Accurate extraction of k_t^2 of piezoelectric film/substrate structure by conversion loss method for subtracting experimental acoustic losses in the substrate
【24h】

Accurate extraction of k_t^2 of piezoelectric film/substrate structure by conversion loss method for subtracting experimental acoustic losses in the substrate

机译:通过转换损耗法精确提取压电薄膜/基板结构的k_t ^ 2,以减去基板中的实验声损耗

获取原文

摘要

Electromechanical coupling coefficient $(pmb{k}_{mathbf{t}}{}^{mathbf{2}})$ is an important parameter for determining the performances of RF BAW filter. The IEEE standard recommends a resonance-antiresonance method for determining the $pmb{k}_{mathbf{t}}{}^{mathbf{2}}$ of the piezoelectric films by using a self-standing film structure. The method for determining $pmb{k}_{mathbf{t}}{}^{mathbf{2}}$ from the film/wafer structure reduces the time and cost of wafer etching process. $pmb{k}_{mathbf{t}}{}^{mathbf{2}}$ is underestimated due to the acoustic losses in the substrate in the conventional conversion loss method, which can extract the $pmb{k}_{mathbf{t}}{}^{mathbf{2}}$ from HBAR. In this study, we introduce a method for subtracting the acoustic losses in the substrate.
机译:机电耦合系数 $(\ pmb {k} _ {\ mathbf {t}} {} ^ {\ mathbf {2}})$ 是确定RF BAW滤波器性能的重要参数。 IEEE标准建议使用共振-反共振方法来确定 $ \ pmb {k} _ {\ mathbf {t}} {} ^ {\ mathbf {2}} $ 通过使用自立膜结构来制造压电膜。确定方法 $ \ pmb {k} _ {\ mathbf {t}} {} ^ {\ mathbf {2}} $ 从膜/晶片结构上去除晶片的时间减少了晶片蚀刻工艺的时间和成本。 $ \ pmb {k} _ {\ mathbf {t}} {} ^ {\ mathbf {2}} $ 由于传统转换损耗方法中基板中的声学损耗,该损耗被低估了,该损耗可以提取出 $ \ pmb {k} _ {\ mathbf {t}} {} ^ {\ mathbf {2}} $ 来自HBAR。在这项研究中,我们介绍了一种用于减去基板中的声损耗的方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号