Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications

摘要

The large linear dynamic range tunnel magnetoresistance (TMR) sensors were designed and successfully fabricated in 8 inch Silicon process line for current / magnetic sensing applications. In this paper, the TMR sensors show their performances strongly depend on wafer etching conditions and aspect ratios (ARs) of magnetic tunnel junctions (MTJs). During the fine-tuning of etching conditions and AR of MTJs, the packaged TMR sensors have large linear dynamic range (> 200 Oe) and suitable characteristics to apply in current measurement system.