SPIN ORBIT MEMORY DEVICES WITH ENHANCED TUNNELING MAGNETORESISTANCE RATIO (TMR) AND METHODS OF FABRICATION

摘要

A spin orbit memory device includes a first electrode including a beta-phase material. The spin orbit memory device further includes a material layer stack on a portion of the first electrode. The material layer stack includes a first layer on the first electrode, where the first layer includes a bcc material such as molybdenum. The material layer stack further includes layers of a perpendicular magnetic tunnel junction (pMTJ) device on the first layer. The pMTJ device includes a free magnet structure on the first layer, where the free magnet structure includes a first magnet and a second magnet on the first magnet. The pMTJ device further includes a fixed magnet above the free magnet structure and a tunnel barrier layer between the magnet structure and the third magnet and a second electrode coupled with the second magnet.