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High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

机译：分子束外延生长的AlInN / GaN纳米线的高效紫外发射

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摘要

The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ∼52% in the ultraviolet wavelength range are presented.

机译：提出了AlInN / GaN核-壳纳米线结构的外延生长和表征，该结构在紫外波长范围内具有高度稳定的发射和〜52％的高内部量子效率。

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《Conference on Lasers and Electro-Optics》|2020年|1-2|共2页
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Ravi Teja Velpula; Barsha Jain; Ha Quoc Thang Bui; Hieu Pham Trung Nguyen;
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Nanowires; Plasma temperature; Substrates; Gallium nitride; Light emitting diodes; Temperature; Molecular beam epitaxial growth;

机译：纳米线;等离子温度;基板;氮化镓;发光二极管;温度;分子束外延生长;

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专利

1. High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al_2O_3 [J] . Jmerik Valentin N., Nechaev Dmitrii V, Toropov Alexey A., Applied physics express . 2018,第9期

机译：基于超薄GaN / AlN多量子阱的高效电子束泵浦亚240纳米紫外发射器，该等离子体阱是在c-Al_2O_3上通过等离子体辅助分子束外延生长的
2. High efficiency ultraviolet emission from AlxGa1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy [J] . Wang Q., Nguyen H. P. T., Cui K., Applied Physics Letters . 2012,第4期

机译：通过分子束外延生长在Si（111）上生长的AlxGa1-xN核-壳纳米线异质结构的高效紫外发射
3. High efficiency ultraviolet emission from Al_xGa_(1-x)N core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy [J] . Q. Wang, H. P. T. Nguyen, K. Cui, Applied Physics Letters . 2012,第4期

机译：分子束外延在Si（111）上生长的Al_xGa_（1-x）N核-壳纳米线异质结构的高效紫外发射
4. Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy [C] . Hiroto Sekiguchi, Kei Kato, Jo Tanaka, International Conference of Nitride Semiconductors . 2008

机译：通过RF等辅助分子束外延在N-（111）Si基材上生长的紫外线GaN的纳米柱发光二极管
5. Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes [D] . May, Brelon J. 2019

机译：分子束外延生长的III族氮化物纳米线紫外发光二极管的均相和电流注入研究与工程
6. Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy [O] . Dingyu Ma, Xin Rong, Xiantong Zheng, -1

机译：分子束外延生长GaN基体中准2D InGaN的激子发射
7. Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” Appl. Phys. Lett. 102, 111107 (2013) [O] . M. Sawicka, C. Chèze, H. Turski, 2014

机译：出版商注：“紫外线发光二极管在Semipolar GaN（202¯1）基板上的等离子体辅助分子束外延生长”Appl。物理。吧。 102,111107（2013）
8. Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy [R] . Sanford, N. A., Blanchard, P. T., Bertness, K. A., 2010

机译：氮等离子体辅助分子束外延生长的c轴GaN纳米线的稳态和瞬态光电导

High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

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