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A Laboratory Light Source for Ultrafast Kinetics of EUV Exposure Processes and Ultra-Small Pitch Lithography

机译：用于EUV曝光过程超快动力学和超小间距光刻的实验室光源

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An ultra-short pulsed, ultra-broadband (~ 13run-~13 μm) light-source has been developed to drive atto- to femto- second time-resolved studies on EUV photo-resist materials. The same source will also be used to investigate EUV driven nano-lithography.

机译：已经开发了一种超短脉冲，超宽带（〜13run-〜13μm）光源，以驱动对EUV光致抗蚀剂材料进行时间分辨到毫微微秒的研究。同样的资源也将用于研究EUV驱动的纳米光刻。

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《Conference on Lasers and Electro-Optics》|2020年|1-2|共2页
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Seth L. Cousin; Clayton Bargsten; Eric Rinard; Rod Ward; Erik Hosier; Brennan Petersen; Henry Kapteyn; Pieter Vanelderen; John Petersen; Paul van der Heide;
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Physics;

机译：物理;

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专利

1. Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography [J] . JunichiFujimoto, TsukasaHori, TatsuyaYanagida, Physics Research International . 2012,第4期

机译：用于HVM EUV光刻的激光生产的基于锡等离子体的EUV光源技术的开发
2. EUV Light Sources for Next-Gen Lithography [J] . null Optics & photonics news . 2018,第3期

机译：EUV光源用于下一型光刻
3. Laser-Produced Plasma Light Sources for EUV Lithography [J] . DAVID C. BRANDT, IGOR V. FOMENKOV, BRUNO M. LA FONTAINE, Solid state technology . 2012,第5期

机译：激光产生的等离子光刻用等离子光源
4. 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV Lithography [C] . D. De Simone, L. Kljucar, P. Das, Conference on Extreme Ultraviolet Lithography . 2021

机译：28nm沥青单曝光通过金属氧化物抗蚀剂的图案化耐用于0.33NA EUV光刻
5. Bright Coherent Ultrafast Tabletop Light Sources Development and the Application on EUV to Soft X-Ray Absorption Spectroscopy. [D] . Ding, Chengyuan. 2014

机译：明亮相干超快速桌面光源的开发以及EUV在软X射线吸收光谱学中的应用。
6. Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources [O] . Kentaro Tomita, Yuta Sato, Syouichi Tsukiyama, -1

机译：极紫外光刻光源的激光产生的锡等离子体的电子密度和温度的时间分辨二维分布
7. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling [O] . Igor Fomenkov, David Brandt, Alex Ershov, 2017

机译：用于大批量生产EUV光刻的光源：技术，性能和功率缩放
8. Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Micro-Field Exposure Tool (MET). Conference: SPIE - Extreme Ultraviolet (EUV) Lithography V, San Jose, CA, February 23, 2014; Related Information: Journal.Publication Date: 90481M. [R] . Cummings, K., Ashworth, D., Bremer, M., 2014

机译：更新sEmaTECH 0.5 Na极紫外光刻（EUVL）微场曝光工具（mET）。会议：spIE - 极紫外（EUV）光刻V，加利福尼亚州圣何塞，2014年2月23日;相关信息：Journal.publication日期：90481m。

A Laboratory Light Source for Ultrafast Kinetics of EUV Exposure Processes and Ultra-Small Pitch Lithography

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