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FinFET Technology : As A Promising Alternatives for Conventional MOSFET Technology

机译:FinFET技术:作为传统MOSFET技术的有希望的替代方法

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In the era of smart computing, almost 85-90% area is captured by memories in digital designs. In order to reduce the power dissipation and improve the overall performance of digital logic circuits, conventional MOSFET technology may replace by FinFET technology. FinFETs are the best choice as an alternative for MOSFET below 32nm technology, as below 32nm short channel effects may introduce more problems. With low leakage and low power feature, FinFET technology becomes very popular and widely used instead of conventional MOS almost in all digital circuits. In this paper, FinFET technology has been demonstrated as a good alternative of conventional CMOS technology.
机译:在智能计算时代,数字设计中的内存可捕获近85-90%的区域。为了减少功耗并改善数字逻辑电路的整体性能,传统的MOSFET技术可能会被FinFET技术取代。 FinFET是32nm以下技术的MOSFET的最佳选择,因为32nm以下的短沟道效应可能会带来更多问题。由于具有低泄漏和低功耗特性,FinFET技术在几乎所有数字电路中都变得非常流行和广泛使用,以代替常规的MOS。在本文中,FinFET技术已被证明是传统CMOS技术的良好替代方案。

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