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A Review of Emerging Devices Beyond MOSFET for High Performance Computing

机译:MOSFET以外的新兴器件的高性能计算述评

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The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device dimensions are continuously shrinking to achieve higher performance, lower cost, and to satisfy the low power demand of high throughput applications. To continue with Moore's law, promising Nanoscale devices with less effects of short channel needs to be fabricated. The emerging devices must be compatible with the Complementary Metal Oxide Semiconductor (CMOS) fabrication technology. The device design community is in search for perfect alternatives of conventional MOSFET. This paper reviews few emerging devices for future high speed, small size and low power which can replace conventional MOSFET.
机译:金属氧化物半导体场效应晶体管(MOSFET)器件尺寸不断缩小,以实现更高的性能,更低的成本,并满足高吞吐量应用的低功耗需求。为了继续遵循摩尔定律,需要制造前景看好的具有较小的短通道效应的纳米级器件。新兴器件必须与互补金属氧化物半导体(CMOS)制造技术兼容。器件设计界正在寻找传统MOSFET的完美替代品。本文针对可替代传统MOSFET的未来高速,小尺寸和低功耗的新兴器件进行了评论。

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