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Elaboration and Characterization of ZnO/FTO thin films under different concentrations - Study dedicated to the photovoltaic systems -

机译:ZnO / FTO薄膜在不同浓度下的制备和表征-致力于光伏系统的研究-

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This paper presents an elaboration of thin films dedicated to photovoltaic systems. Zinc oxide (ZnO) on fluorine tin oxide (FTO) coated glass substrates are one of the best semiconductors oriented to solar cell preparations. In this study, the ZnO solution is performed with some sol concentration (0.1 M to 0.5 M) to verify its effect on thin-film samples. On the other hand, samples prepared are analyzed and characterized in structural and the optical properties using different techniques as ultraviolet-visible (UV-vis) spectrometry, Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD). This work showed the variation of the energy gap (Eg) values. The Eg values allow us to ensure good solar cells. In this study, the thin films prepared showed that the energy gap values are ranged between 3.29 eV and 3.4 eV. These results led us to confirm the possibility of having an easy passage of the electrical current. In addition, the transmittance spectra of the ZnO/FTO thin films showed an average of ∼75% in the visible region and presented sharp absorption edges at 375 nm. The experimental preparation ensures a good decision about electrical energy production which based on the photovoltaic systems.
机译:本文介绍了专门用于光伏系统的薄膜的详细说明。涂有氟锡氧化物(FTO)的玻璃基板上的氧化锌(ZnO)是面向太阳能电池制备的最佳半导体之一。在这项研究中,以一定的溶胶浓度(0.1 M至0.5 M)进行ZnO溶液以验证其对薄膜样品的影响。另一方面,使用不同的技术(例如紫外可见光谱,傅立叶变换红外光谱(FT-IR)和X射线衍射(XRD))对制备的样品进行分析和结构和光学性质表征。这项工作表明了能隙(Eg)值的变化。 Eg值使我们能够确保良好的太阳能电池。在这项研究中,制备的薄膜表明能隙值在3.29 eV和3.4 eV之间。这些结果使我们确认了容易通过电流的可能性。此外,ZnO / FTO薄膜的透射光谱在可见光区域的平均光谱约为75%,在375 nm处呈现出清晰的吸收边缘。实验准备工作确保了基于光伏系统的电能生产的良好决策。

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