Germanium Source Double-Gate Tunnel Field Effect Transistor with Metal Drain: Design Simulation

摘要

In this paper, we propose and simulate a Germanium Source-Double Gate Tunnel-field Effect Transistor with a metallic drain (GS-DGTFET-MD). The use of Germanium source and a metal silicide drain has significantly improved the ON current (ION) and ambipolar suppression in the proposed device in comparison to the conventional DGTFET. A two dimensional (2D) calibrated simulation study has revealed a ~3 orders improvement in ION and ~10 orders reduction in ambipolarity even at a gate voltage range of −0.8 V in the proposed device in comparison to the conventional DGTFET. The ION/IOFF ratio of the proposed device is ~10¹⁴, which is significantly larger than the conventional one. The sub-threshold slope of the proposed device is 36mV/dec at drain voltage of 0.5V and a gate voltage of 0.8V. Further, it has been observed that the performance of the proposed device can be improved further by optimizing various device parameters.