A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs

摘要

Random Telegraph Noise (RTN)/fluctuation is one of the most serious reliability issues in modern deeply scaled CMOS. The current RTN characterization methods need to select devices and can only capture the fast traps, thus it is very difficult to predict and validate device long-term fluctuation behavior. A new fast and test-proven methodology of assessing RTN/fluctuation is proposed in this work. By using the Within Device Fluctuation (WDF), all the devices’ fluctuation can be captured. Moreover, WDF can be well explained and simulated as a sum of all the As-grown Traps (AT) induced RTN.