Development of a novel 600V/50A power package with semiconductor chips sandwiched between PCB substrates using double-side Ag-sintering

摘要

PCB embedding is a novel and promising approach for packaging of power semiconductors. Due to the planar construction the technology enables lower conduction and switching losses, an increase switching frequency and ultimately yields a higher power density. Usually embedding is performed during lay-up of the PCB. Here, a novel concept for fabrication of PCB based power devices is proposed. The bare dies are sandwiched between two circuit boards using Ag sintering and simultaneous lamination of prepregs. The technology is discussed with reference to a 600V / 50A IGBT half bridge module. Using high-Tg isolator material in the PCB, a suitable process window is established and laboratory demonstrators are fabricated. An electrical characterization proves the feasibility of the concept.