Characterization of 1.7kV SiC MOSFET / Si IGBT cross-switch hybrid on the LinPak platform

摘要

In this paper, the feasibility of a high-power cross-switch hybrid module and its benefits were demonstrated. First, numerical simulations were performed to determine the most cost-effective ratio of Si/SiC area in the module. Afterwards, concept demonstrators combining a Si IGBT and a diode together with a SiC MOSFETs were assembled on the ABB platform of MV Si half-bridge module - LinPak. Finally, static and dynamic performance of the cross-switch hybrid concept was investigated, and the concept was benchmarked against an all-Si and all-SiC solution.