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DEEPER UNDERSTANDING OF COBALT-DOPED SIC NANOWIRES AS EXCELLENT ELECTROMAGNETIC WAVE ABSORBERS

机译:出色的钴掺杂SIC纳米线作为出色的电磁波吸收剂的理解

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Doping is a facile and effective technique that plays a key role in the function of many semiconductor materials. Unraveling the regulatory mechanism of doping can offer useful guidance for the design of the material structure and fabricating novel functional composites invalid in pure phase structures, which extents their applications in catalysts, light emitting devices, and environmental protection. Especially, transition metal doping related to the spin and charge introduces foreign states to the electronic structures in the host materials and endows the composites with intriguing properties. However, most of the reported papers are limited on the fabrication of the doped composites with enhanced performance. Little progress has been made to clarify the underlying mechanism for those improvements. Herein, Co-doped SiC nanowires with different Co contents were successfully fabricated by a simple carbothermal reduction method. The Co-doped SiC nanowires were characterized in terms of microstructure, electronic structure, and electromagnetic (EM) parameters to study the effects of doping on enhancing the EM wave absorption ability. Both the microstructure analysis and density functional theory calculations indicated that the incorporation of Co into SiC nanowires inhibited the formation of defective structures but increased their conductivity. Thus, the improved electronic transportation ability was dominant in enhancing the dielectric loss. The Co dopants also imparted the Co-doped SiC nanowires with magnetic property, which could generate magnetic resonance to attenuate EM wave and achieve superior impedance matching. The induced synergistic effects between Co dopants and SiC nanowires endowed Co-doped SiC nanowires with excellent EM wave absorption ability. Their minimum reflection loss was -50 dB, and the effective absorption bandwidth was up to 4.0 GHz at 1.5 mm sample thickness. Therefore, the fabricated Co-doped SiC nanowires are potential candidates for high-efficiency EM wave absorption materials. The findings of this research provide a guideline for other doped functional composites.
机译:掺杂是一种简便有效的技术,在许多半导体材料的功能中起着关键作用。阐明掺杂的调节机制可以为材料结构的设计和制造纯相结构无效的新型功能复合材料提供有用的指导,从而扩大其在催化剂,发光器件和环境保护中的应用。特别地,与自旋和电荷相关的过渡金属掺杂将异物引入主体材料中的电子结构,并使复合材料具有耐人寻味的性能。然而,大多数已报道的论文仅限于具有增强性能的掺杂复合材料的制造。在澄清这些改进的基本机制方面进展甚微。本文通过简单的碳热还原法成功地制备了不同Co含量的Co掺杂SiC纳米线。通过微观结构,电子结构和电磁(EM)参数对Co掺杂的SiC纳米线进行了表征,以研究掺杂对增强EM波吸收能力的影响。微观结构分析和密度泛函理论计算均表明,将Co掺入SiC纳米线可抑制缺陷结构的形成,但可提高其导电性。因此,提高的电子传输能力在增加介电损耗方面占主导地位。 Co掺杂剂还赋予Co掺杂的SiC纳米线具有磁性,该磁性可以产生磁共振以衰减EM波并实现出色的阻抗匹配。 Co掺杂剂与SiC纳米线之间的协同效应赋予了Co掺杂的SiC纳米线以优异的EM波吸收能力。它们的最小反射损耗为-50 dB,在1.5 mm样品厚度下的有效吸收带宽高达4.0 GHz。因此,所制备的Co掺杂的SiC纳米线是高效EM波吸收材料的潜在候选者。这项研究的发现为其他掺杂功能复合材料提供了指导。

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