Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors

摘要

So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large memory window (MW) for the first time. Moreover, we propose different integration schemes comprising structures with and without internal gate resulting in metal-FE-insulator-Si (MFIS) and metal-FE-metal-insulator-Si (MFMIS) devices which could be used to tackle the problem of interface (IF) degradation and possibly decrease the power consumption of the devices.