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Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

机译：基于Hafnia的高k电介质栅极对钼二硫域效应晶体管的沟道长度的影响

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Yanxiao Sun; Gang Niu; Wei Ren; Jinyan Zhao; Yankun Wang; Heping Wu; Luyue Jiang; Liyan Dai; Ya-Hong Xie; Pedro Rojo Romeo; Jordan Bouaziz; Bertrand Vilquin;
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1. Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate [J] . Yanxiao Sun, Gang Niu, Wei Ren, AIP Advances . 2021,第6期

机译：基于Hafnia的高k电介质栅极对钼二硫域效应晶体管的沟道长度的影响
2. Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics [J] . Bolshakov Pavel, Zhao Peng, Azcatl Angelica, Microelectronic Engineering . 2017,第juna期

机译：具有高k电介质的顶栅二硫化钼场效应晶体管的电学特性
3. Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor [J] . Han Jin Lim, Youngkuk Kim, In Sang Jeon, Applied Physics Letters . 2013,第23期

机译：高k介电栅极氧化物的结晶对n沟道金属氧化物半导体场发射晶体管的正偏置温度不稳定性的影响
4. The Impact of a High-K Gate Dielectric on a p-Channel Tunnel Field-Effect Transistor [C] . Avik Chattopadhyay, Abhijit Mallik International workshop on physics of semiconductor devices . 2012

机译：高k栅极电介质对P沟道隧道场效应晶体管的影响
5. Gate dielectric investigations of ultra-thin oxide and nitride /oxide stack for nanometer N- and P -channel metal-oxide-semiconductor field-effect-transistors [D] . Yee, Kam Fu 2000

机译：纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
6. Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts [O] . Yu Chai, Shanshan Su, Dong Yan, -1

机译：带边缘接触的应变门控双层二硫化钼场效应晶体管
7. Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics [O] . Bolshakov Pavel, Zhao Peng, Azcatl Angelica, 2017

机译：具有高k电介质的顶栅二硫化钼场效应晶体管的电学特性
8. Fabrication of n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with0.2 Micrometer Gate Lengths in 500 A Thin Film Silicon on Sapphire. (Reannouncement with New Availability Information) [R] . de la Houssaye, P. R., Offord, B. W., Minter, J. P., 1992

机译：在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。（重新公布新的可用性信息）

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

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