Mapping of Metal/Semiconductor and Semiconductor/Semiconductor Interfaces Using Scanning Internal Photoemission Microscopy

摘要

Scanning internal photoemission spectroscopy has been developed to map the electrical characteristics of metal/semiconductor interfaces nondestructively. Our experimental demonstrations of the mapping characterization are reviewed from the aspects of (1) thermal degradation, (2) device degradation by applying high-voltage, (3) process-induced surface damages, (4) grain boundaries of semiconductors and printed metal particles, and (5) expansion to semiconductor/ semiconductor and metal-insulator-semiconductor interfaces. This technique was confirmed to be useful for the development of the wide-bandgap-semiconductor high-power devices.