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A Digital In-Analogue Out Logic Gate Based on Metal-Oxide Memristor Devices

机译:基于金属氧化物忆阻器的数字模拟输出逻辑门

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An important cornerstone of data processing is the ability to efficiently capture structure in data and perform data classification. More recently, memristive technologies enabled the incorporation of continuous tuneable resistive elements directly in hardware, thus increasing the efficiency of reconfigurable systems power and area-wise. Memristors are a promising candidate for reconfigurable circuits capable of carrying out classification with physical computing, such as dot-product vector multiplication and accumulation technique. In this work, we demonstrate a novel proof-of-concept memristor-based Digital-In-Analogue-Out logic circuit and present preliminary results highlighting the effect of non-uniform non-linear memristor IV characteristics that result in device-to-device behavioural variation.
机译:数据处理的重要基石是有效捕获数据中的结构并执行数据分类的能力。最近,忆阻技术使连续可调电阻元件直接并入硬件中,从而提高了可重配置系统电源和区域效率的效率。忆阻器是可重构电路的有希望的候选者,该电路能够通过物理计算(例如点积矢量乘法和累加技术)进行分类。在这项工作中,我们演示了一种基于概念验证器的新型基于忆阻器的数字输入模拟输出逻辑电路,并提供了初步结果,突出了非均匀非线性忆阻器IV特性的影响,这种特性导致了器件之间的差异行为差异。

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