A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant

机译：带有埋入浮动P型植入物的新型HV-NPN ESD保护装置

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A novel high voltage NPN (HV-NPN) device with buried floating P-type (BFP) implant at collector side was developed for electrostatic discharge (ESD) protection in a 130nm low cost high voltage CMOS technology. The characteristics of the novel HV-NPN device using transmission line pulse (TLP) measurements show that a second snapback enhances the failure current and reduces the on-resistance at a certain high current levels. The device mechanism is illustrated with technology computer aided design (TCAD) simulation results.

机译：开发了一种新颖的高压NPN（HV-NPN）器件，该器件在集电极侧具有掩埋浮置P型（BFP）植入物，用于采用130nm低成本高压CMOS技术进行静电放电（ESD）保护。使用传输线脉冲（TLP）测量的新型HV-NPN器件的特性表明，在一定的高电流水平下，第二次骤回会增强故障电流并降低导通电阻。通过技术计算机辅助设计（TCAD）仿真结果说明了该设备机制。

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《International Reliability Physics Symposium》|2019年|1-4|共4页
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Jie Jack Zeng; Ruchil Jain; Kyong Jin Hwang; Robert Gauthier;
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Electrostatic discharges; Implants; High-voltage techniques; CMOS technology; Impact ionization; Charge carrier processes; Transmission line measurements;

机译：静电放电;放大器;高压技术; CMOS技术;抗电离;电荷载流子工艺;传输线测量;

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1. The Influence of N-Type Buried Layer on SCR ESD Protection Devices [J] . Wang Yang, Chen Xijun, Jia Dandan, IEEE transactions on device and materials reliability . 2020,第4期

机译：n型埋藏层对SCR ESD保护装置的影响
2. Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes [J] . E.H.T. Olthof, G.J. de Raad Microelectronics reliability . 2008,第8a9期

机译：ESD保护器件的非线性宽度缩放，并与BCD工艺中的p阱注入关联
3. Design of ESD protection device using body floating technique in 65 nm CMOS process [J] . J.-I. Won, J.-W. Jung, I.-S. Yang, Electronics Letters . 2011,第19期

机译：采用体浮技术在65 nm CMOS工艺中设计ESD保护器件
4. A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant [C] . Jie Jack Zeng, Ruchil Jain, Kyong Jin Hwang, International Reliability Physics Symposium . 2019

机译：一种新型HV-NPN ESD保护装置，具有掩埋浮动P型植入物
5. Design, characterization and compact modeling of novel silicon controlled rectifier (SCR)-based devices for electrostatic discharge (ESD) protection applications in integrated circuits. [D] . Lou, Lifang. 2008

机译：新型基于硅的可控整流器（SCR）的器件的设计，表征和紧凑模型，用于集成电路中的静电放电（ESD）保护应用。
6. Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices [O] . Ya-Ting Shi, Fang-Fang Ren, Wei-Zong Xu, -1

机译：通过镁离子注入实现垂直功率器件的p型氮化镓
7. ACC/AHA/NASPE 2002 Guideline Update for Implantation of Cardiac Pacemakers and Antiarrhythmia Devices—Summary Article A Report of the American College of Cardiology/American Heart Association Task Force on Practice Guidelines (ACC/AHA/NASPE Committee to Update the 1998 Pacemaker Guidelines) 11This document was approved by the American College of Cardiology Foundation Board of Trustees in September 2002, the American Heart Association Science Advisory and Coordinating Committee in August 2002, and the North American Society for Pacing and Electrophysiology in August 2002.22The ACC/AHA Task Force on Practice Guidelines makes every effort to avoid any actual or potential conflicts of interest that might arise as a result of an outside relationship or personal interest of a member of the writing panel. Specifically, all members of the writing panel are asked to provide disclosure statements of all such relationships that might be perceived as real or potential conflicts of interest. These statements are reviewed by the parent task force, reported orally to all members of the writing panel at the first meeting, and updated as changes occur. The conflict of interest information for the writing committee members is posted on the ACC, AHA, and NASPE Web sites with the full-length version of the update.33When citing this document, the ACC, the AHA, and NASPE would appreciate the following citation format: Gregoratos G, Abrams J, Epstein AE, Freedman RA, Hayes DL, Hlatky MA, Kerber RE, Naccarelli GV, Schoenfeld MH, Silka MJ, Winters SL. ACC/AHA/NASPE 2002 Guideline Update for Implantation of Cardiac Pacemakers and Antiarrhythmia Devices—Summary Article: A Report of the American College of Cardiology/American Heart Association Task Force on Practice Guidelines (ACC/AHA/NASPE Committee to Update the 1998 Pacemaker Guidelines). J Am Coll Cardiol2002;40:1703–19.44Copies: This document is available on the World Wide Web sites of the ACC (www.acc.org) and the AHA (www.americanheart.org). A single copy of the complete guidelines is available by calling 800-253-4636 (US only) or writing the American College of Cardiology, Resource Center, 9111 Old Georgetown Road, Bethesda, MD 20814-1699 (ask for No. 71-0237). To obtain a copy of the Summary Article, ask for reprint No. 71-0236. To purchase additional reprints (specify version and reprint number): up to 999 copies, call 800-611-6083 (US only) or fax 413-665-2671; 1000 or more copies, call 410-528-4426, fax 410-528-4264, or e-mail kbradle@lww.com.55(J Am Coll Cardiol 2002;40:1703–19.)66©2002 by the American College of Cardiology Foundation and the American Heart Association, Inc. [O] . Gregoratos Gabriel, Abrams Jonathan, Epstein Andrew E, 2002

机译：ACC / AHA / NASPE 2002心脏起搏器和抗心律失常装置植入指南更新-总结文章美国心脏病学会/美国心脏协会实践指南工作组的报告（ACC / AHA / NASPE委员会将更新1998年起搏器指南） 11该文件于2002年9月获得美国心脏病学会基金会董事会的批准，于2002年8月获得美国心脏协会科学咨询和协调委员会的批准，并于2002年8月获得北美起搏和电生理学会的批准。22ACC / AHA工作组《实践指南》将尽一切努力避免由于写作小组成员的外部关系或个人利益而引起的任何实际或潜在的利益冲突。具体来说，要求写作小组的所有成员提供所有可能被视为实际或潜在利益冲突的关系的披露声明。这些声明由上级工作组审核，在第一次会议上口头报告给写作小组的所有成员，并在发生变化时进行更新。撰写委员会成员的利益冲突信息已发布在更新的完整版本的ACC，AHA和NASPE网站上。33当引用本文档时，ACC，AHA和NASPE将不胜感激。格式：Gregoratos G，Abrams J，Epstein AE，Freedman RA，Hayes DL，Hlatky MA，Kerber RE，Naccarelli GV，Schoenfeld MH，Silka MJ，Winters SL。 ACC / AHA / NASPE 2002心脏起搏器和抗心律失常装置植入指南更新-总结文章：美国心脏病学会/美国心脏协会实践指南工作组的报告（ACC / AHA / NASPE委员会更新了1998年起搏器指南）。 J Am Coll Cardiol2002； 40：1703–19.44复制：此文档可在ACC（www.acc.org）和AHA（www.americanheart.org）的万维网站点上找到。您可以致电800-253-4636（仅限美国）或写信给美国心脏病学会资源中心，地址为9111 Old Georgetown Road，Bethesda，MD 20814-1699，获得一份完整的指南（请致电71-0237））。要获得摘要文章的副本，请索要第71-0236号转载。要购买其他重印本（指定版本和重印本号码）：最多999份，请致电800-611-6083（仅限美国）或传真413-665-2671；否则，请重新发送。 1000份或更多，请致电410-528-4426，传真410-528-4264或发送电子邮件至kbradle@lww.com.55（J Am Coll Cardiol 2002； 40：1703–19。）66©2002美国心脏病学基金会基金会和美国心脏协会有限公司

A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant

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