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Advances in Testing and Design-for-Test Solutions for M3D Integrated Circuits*

机译:用于M3D集成电路的测试和设计测试解决方案的进步*

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Monolithic 3D (M3D) integration has the potential to achieve significantly higher device density compared to TSV-based 3D stacking. Sequential integration of transistor layers enables high-density vertical interconnects, known as inter-layer vias (ILVs), However, high integration density and aggressive scaling of the inter-layer dielectric make M3D integrated circuits especially prone to process variations and manufacturing defects. We explore the impact of these fabrication imperfections on chip-performance and present the associated test challenges. We introduce two M3D-specific design-for-test solutions - a low-cost built-in self-test architecture for the defect-prone ILVs and a tier-level fault localization method for yield learning. We describe the impact of defects on the efficiency of delay fault testing and highlight solutions for test generation under constraints imposed by the 3D power distribution network.
机译:与基于TSV的3D堆叠相比,单片3D(M3D)集成有可能实现更高的器件密度。 晶体管层的顺序集成使得能够称为层间通孔(ILV)的高密度垂直互连,然而,层间电介质的高积分密度和积极的缩放,使M3D集成电路尤其容易处理变化和制造缺陷。 我们探讨了这些制造缺陷对芯片性能的影响,并提出了相关的测试挑战。 我们介绍了两种M3D特定的测试解决方案 - 一种低成本的自我测试架构,可用于易于缺陷ILV和用于产量学习的层级故障定位方法。 我们描述了3D配电网络施加的约束下测试生成延迟故障测试效率对延迟故障测试的影响。

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