Insights on Anisotropic Dissipative Quantum Transport in n-Type Phosphorene MOSFET

摘要

We study the quantum dissipative transport in Phosphorene n-type metal oxide semiconductor field effect transistor (MOSFET) in armchair and zigzag directions. The transport equations are solved quantum mechanically under the nonequilibrium Green's function (NEGF) formalism and relies on a single-band effective mass Hamiltonian. The treatment of electron phonon scattering is done under the self consistent Born approximation (SCBA). We investigate in detail the effect of different acoustic and optical phonon modes on the drain current of the device for different channel lengths. We show that optical phonon mode with a deformation potential constant of 8.07x10^8 eV/cm and energy 0.0421 eV plays the most important role in electron phonon scattering and subsequent degradation of ON current in devices along both directions. We also find that effect of electron phonon scattering is more pronounced along zigzag direction.