首页> 外文会议>China Semiconductor Technology International Conference >Effect of Chelating Agent on the Galvanic Corrosion between Copper and Tantalum based Alkaline Polishing Surry
【24h】

Effect of Chelating Agent on the Galvanic Corrosion between Copper and Tantalum based Alkaline Polishing Surry

机译:螯合剂对铜和钽基碱性抛光剂电偶腐蚀的影响

获取原文

摘要

Galvanic corrosion (gc) will be occurred at the interface of copper and tantalum contact polishing slurry during chemical mechanical planarization (CMP). In this paper, a kind of chelating agent was proposed to reduce the gc between Cu and Ta by investigating the potential of corrosion, static corrosion rate. Galvanic corrosion potential would be reduced which reveal that chelating agent can reduce the galvanic corrosion.
机译:在化学机械平面化(CMP)过程中,铜和钽接触抛光浆料的界面将发生电化腐蚀(gc)。本文提出了一种螯合剂,通过研究其潜在的腐蚀电位,静态腐蚀速率来降低Cu和Ta之间的gc。电偶腐蚀电位将降低,这表明螯合剂可以减少电偶腐蚀。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号