Wafer-scale Au-Au surface activated bonding using atmospheric-pressure plasma

摘要

Wafer-scale surface activated bonding (SAB) using intermediate layers of ultra-thin Au films was performed by using glow-discharge-type atmospheric-pressure (AP) plasma with a direct plasma system. The entire process, from surface activation to bonding, was performed in ambient air using AP plasma. While partial wafer bonding was obtained with 2.5 s plasma treatment, strong bonding was obtained with both 10 s and 30 s plasma treatment, and the Si substrates were sometimes broken in a razor blade test.