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COPPER, SILVER, AND PCC WIREBONDS RELIABILITY IN AUTOMOTIVE UNDERHOOD ENVIRONMENTS

机译:铜,银和PCC线在汽车不足环境中的可靠性

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Wire bonding is popular first-level interconnect method used in the semiconductor device packaging. Gold (Ag) wire is often used in high-reliability applications. Typical wire diameters vary between 0.8mil to 2mil. Recent increases in the gold-price have motivated the industry to search for alternate materials candidates for use in wirebonding. Three of the leading candidates are Silver (Ag), Copper (Cu), and Palladium Coated Copper (PCC). The new material candidates are inexpensive in comparison with gold and may have better electrical, and thermal properties, which is advantageous for fine pitch-high density electronics. The transition, however, comes along with few trade-offs such as narrow process window, higher wire-hardness, increased propensity for chip-cratering, lack of reliability knowledge base of when deployed in harsh environment applications. Relationship between mechanical degradation of the wirebond and the change in electric response needs to be established for better understanding of the failure modes and their respective mechanisms. Understanding the physics of damage progression may provide insights into the process parameters for manufacture of more robust interconnects. In this paper, a detailed study of the electrical and mechanical degradation of wirebonds under high temperature exposure is presented. Four wirebond candidates (Au, Ag, Cu and PCC) bonded onto Aluminum (Al) pad were subjected to high temperature storage life until failure to study the degradation of the bond-wire interface. Same package architecture and electronic molding compound (EMC) were used for all four candidates. Detailed analysis of intermetallic (IMC) phase evolution is presented along with quantification of the phases and their evolution over time. Ball shear strength was measured after decapsulation. Measurements of shear strength, shear failure modes, and IMC composition have been correlated with the change in the electrical response. Change in shear strength and different shear failure modes for different wirebond systems are discussed in the paper.
机译:引线键合是在半导体器件封装中使用的流行的第一级互连方法。金(Ag)线通常用于高可靠性应用中。典型的线径在0.8mil至2mil之间变化。近期金价上涨促使该行业寻找替代材料以用于引线键合。领先的三个候选人是银(Ag),铜(Cu)和镀钯铜(PCC)。与金相比,新材料的候选者价格便宜,并且具有更好的电学和热学性能,这对于精细间距高密度电子学是有利的。但是,这种过渡很少会做出权衡取舍,例如狭窄的工艺窗口,更高的线材硬度,增加的芯片缩孔倾向,缺乏在恶劣环境应用中部署时的可靠性知识基础。需要建立引线键合的机械性能退化与电响应变化之间的关系,以更好地了解失效模式及其各自的机理。了解损伤进展的物理原理可能会提供有关制造更坚固互连的工艺参数的见解。在本文中,对高温暴露下引线键合的电气和机械性能进行了详细的研究。粘接在铝(Al)焊盘上的四个引线键合候选材料(Au,Ag,Cu和PCC)经受高温存储寿命,直到未能研究键合引线界面的退化。相同的封装结构和电子模塑化合物(EMC)用于所有四个候选对象。给出了金属间(IMC)相演变的详细分析,以及相的定量及其随时间的演变。解封后测定球的剪切强度。剪切强度,剪切破坏模式和IMC组成的测量已与电响应的变化相关。本文讨论了不同引线键合系统的剪切强度变化和不同的剪切破坏模式。

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