FANTASI: A novel devices-to-circuits simulation framework for fast estimation of write error rates in spintronics

摘要

Though physical mechanisms such as spin-transfer torque (STT), spin-orbit torque (SOT), and voltage-controlled magnetic anisotropy (VCMA) has potential to enable energy-efficient and ultra-fast switching of spintronic devices, the switching dynamics are stochastic due to thermal fluctuations. Thus, there is a need in spintronics to understand the interactions between circuit design and the error rate in the switching mechanism, called as write error rate. In this paper, we propose a novel devices-to-circuits simulation framework (FANTASI) for fast estimation of the write error rates (WER) in different spintronic devices and circuits. Here, we show that, FANTASI enables efficient spintronic device-circuit co-design, with results in good agreement with the experimental measurements.