High Endurance Phase Change Memory Chip Implemented based on Carbon-doped Ge2Sb2Te5 in 40 nm Node for Embedded Application

摘要

In this work, we present the results of a highly reliable phase change memory (PCM) based on Carbon-doped Ge₂Sb₂Te₅- material in 40 nm node. The large Reset/Set resistance ratio of more than 2 orders of magnitude is achieved. The chip exhibits excellent data retention, endurance characteristics, and the sensing window is even larger after 260°C soldering test. It is estimated that the PCM could retain data for 10 years at 128°C. In a 128 Mb test chip over 10⁸ cycles is achieved. PCM is suitable for applications requiring high thermal stability and cycling endurance.