STI Si damage defect reduction by HDP profile optimizations

摘要

Unique defect related to the tighter process margins on STI HDP process was investigated. The root cause was Si surface damage due to smaller top width of HDP. The defect was improved by HDP deposition process optimization derived relationship between ion incident angle and sputtering rate during deposition process. It was elucidated that HDP process is important for not only gap filling capability but also HDP physical profile control to obtain robustness process establishment.