Modeling self-heating effects in advanced CMOS nodes

摘要

In this paper, we analyze the impact of the self-heating observed on Back End of Line (BEoL) structures and NMOS transistors in 28nm FDSOI technology. Metal characterization is required to calculate the thermal resistance (Rth). A given model relates the calculated thermal resistance to thermal conductivity (k). Rth and k are the input data used for the BEoL self-heating simulation.