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Design of 24-30 GHz GaN Power Amplifiers with Harmonic-controlled Matching Network

机译:用谐波控制匹配网络设计24-30 GHz GAN功率放大器

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Two monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) using 0.1 um GaN process are presented in this work. The PAs are designed to work from 24 to 30 GHz, covering the frequencies like 24.25-27.5 GHz, 27.5-28.35 GHz and 27.5-29.1 GHz for 5G millimeter-wave (mm-Wave) bands. A harmonic-controlled output matching method is used to improve bandwidth and efficiency for two PAs, one is a single stage PA and the other is a two-stage two-way combined PA. The single stage PA has a first measurement results of 25 dBm output power and 25% power-added efficiency (PAE), which are 3.5 dB and 11 % lower than the simulation results. The total sizes of the chips are 1.05*0.65 mm2 and 1.75*1.25 mm2, respectively. The single stage PA is packaged and the measured results agree with the simulated results in terms of small signal performance.
机译:这项工作中提出了使用0.1 um GaN工艺的两种单片微波集成电路(MMIC)功率放大器(PAS)。 PAS设计为24到30 GHz,涵盖24.25-27.5 GHz,27.5-28.35GHz和27.5-29.1GHz的频率为5G毫米波(MM波)带。谐波控制的输出匹配方法用于提高两个PA的带宽和效率,是一个是单级PA,另一个是两级双向组合PA。单级PA具有第一个测量结果为25dBm输出功率和25%的加电效率(PAE),比仿真结果低3.5dB和11%。芯片的总尺寸为1.05 * 0.65 mm 2 和1.75 * 1.25 mm 2 , 分别。单级PA被打包,测量结果与小信号性能的模拟结果一致。

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