Understanding Endurance in TiN/a-Si/TiOx/TiN RRAM Devices

摘要

Amorphous Vacancy Modulated Conductive Oxide resistive switching devices (TiN/a-Si/TiO_x/TiN) are attractive for storage class memory applications due to their self-rectifying and self-compliant characteristics with low current switching. However, the endurance is intrinsically limited to 10^{3cycles. Using specific experiments and insights from kinetic defect distribution models, we identify two modes of failure - first, window closure to the middle due to defect loss and profile symmetrization as the consequences of current and field driven-defect profile modulation, respectively, and second, excess defect generation at higher bias culminating in dielectric breakdown. Based on these findings, we suggest improvement to the device stack.}