An Analysis of Voltage-Driven Spintronic Device Concatenation Through Spin Pumping

摘要

A prominent issue with spintronic architectures is the requirement to use charge current in order to realize magnetic state transduction, and thus, device concatenation, which is far less efficient than voltage-based devices, such as CMOS. With the advent and implementation of new spintronic technologies such as topological insulators and magnetoelectric materials, great improvements in energy efficiency have been achieved and are expected to improve. One may surmise that such technologies could provide an avenue to voltage-driven spintronic device concatenation. In this work, we explore the possibility of utilizing the magnetoelectric effect to induce ferromagnetic resonance, injecting pure spin current into an adjacent topological insulator through Spin Pumping, which then induces a potential difference depending upon the state of the ferromagnet that can then be used to switch cascaded devices. Thus, implementing voltage-based spintronic concatenation. By using a purely energy-based perspective of a sandbox device model to explore the constraints and boundaries of such behaviors, the potential and challenges of such a scheme are identified and discussed.