High Voltage Semiconductor Switch on the Base Of RCRSD for Bipolar Power Current Pulse Commutation

摘要

This paper presents new version of reverse switched dynistor (RSD) that has been optimized for power bipolar pulse current commutation. Reverse conducted RSD (RCRSD) is described that contains certain quantity of integrated inverse diodes in dynistor silicon structure that are uniform distributed on active device surface for required reverse conduction. Additional triode cells are integrated into dynistor structure for high direct current commutation capability in microsecond and sub-millisecond range. These cells decrease RCRSD turn-on time and increase di/dtcr. It provides effective commutation of power bipolar pulse current with single device, current pulse series is triggered by only one outside control pulse. The paper describes RCRSD design, high voltage block on the base of RCRSD and presents calculated and experimental dates that demonstrate new device operation.