Influence of Auxiliary Gate and Emitter Connections on Short Circuit Behaviour of Multichip IGBT Modules

摘要

This paper investigates the influence of the auxiliary emitter and the gate connections on short circuit current behaviour of multichip IGBT power module. It reveals that the position of the auxiliary emitter connection has significant impact on the short circuit current of the power module. Experimental results validate the analysis of the short circuit current. The conclusion of this paper helps substrate layout design in terms of short circuit performance.