Robustness of MW-Level IGBT modules against gate oscillations under short circuit events

摘要

The susceptibility of MW-level IGBT power modules to critical gate voltage oscillations during short circuit events has been evidenced experimentally. This paper proposes a sensitivity analysis method to better understand the oscillating behavior dependence on different operating conditions (i.e., collector-emitter voltage, gate-emitter voltage and temperature). A study case on 1.7 kV/1 kA IGBT power modules is presented. The proposed study helps to understand the oscillation mechanism by revealing its relationship with different working conditions. Moreover, the study can be helpful to understand the oscillation phenomenon, as well as to further improve the device performance during short circuit. (C) 2015 Elsevier Ltd. All rights reserved.