Mid-Infrared Electro-Absorption Optical Modulation in GeSn Photodiodes on Silicon

摘要

We report mid-infrared optical modulation in GeSn photodiodes on silicon. The incorporation of Sn into Ge shrinks the direct bandgap energy, redshifting the absorption edge to longer wavelengths and enabling electro-absorption optical modulation based on Franz-Keldysh effect in the mid-infrared range.