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Electromigration and Thermal Storage Study of Barrierless Co Vias

机译:无障碍Co通孔的电迁移和蓄热研究

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We study the reliability performance in terms of electromigration and thermal storage of barrierless Co vias. While for our reference with Cu filled vias and a TaNCo barrier/liner system we did observe voids in some vias after electromigration, these voids were not observed for the Co vias and thus the studied system is more scalable towards smaller vias. Long thermal storage measurements show more failures in barrierless Co vias. As this problem is linked to a weak Co/dielectric interface and Co/Cu-intermixing, a better adhesion between the Co and the low-k, the use of a non-porous low-k dielectric and the use of a barrier at the via bottom could help to reduce this phenomenon.
机译:我们研究无障碍Co通孔在电迁移和热存储方面的可靠性表现。尽管我们参考了Cu填充过孔和TaNCo阻挡层/衬里系统,但在电迁移后我们确实观察到了某些过孔中的空隙,而对于Co过孔却没有观察到这些过孔,因此,研究的系统更适合于较小的过孔。长时间的热存储测量表明,无阻Co通孔中的故障更多。由于此问题与弱的Co /介电界面和Co / Cu互混,Co与低k之间更好的粘合性,无孔低k电介质的使用以及在硅层上使用势垒有关。底部通孔可以帮助减少这种现象。

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