Connected Component Analysis of Review-SEM Images for Sub-10 nm Node Process Verification

摘要

Analysis of hotspots is becoming more and more critical as we scale from node to node. To define true process windows at sub-14 nm technology nodes, often defect inspections are being included to weed out design weak spots (often referred to as hotspots). Defect inspection sub 28 nm nodes is a two pass process. Defect locations identified by optical inspection tools need to be reviewed by review-SEM's to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review-SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of review-SEM images which are existing can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component analysis.