Experimental investigation of the impact of SEM chamber conditions on the contact resistance of in-situ nanoprobing

摘要

This paper reports the experimental investigation of the impact of vacuum chamber conditions (cleanliness level and vacuum pressure) of scanning electron microscopy (SEM) on the contact resistance of two-point in-situ nanoprobing. Using two typical types of conductive nanoprobe, two-point electrical nanoprobing is performed on silicon nanowires, during which changing trends of the nanoprobing contact resistance with the levels of SEM chamber cleanliness and vacuum pressure are quantified. This experimental results can serve as a guideline to evaluate electrical contacts of nanoprobing and instruct how to reduce the contact resistance in SEM-based two-point nanoprobing applications.