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A.C. conductivity, Dielectric and Electric Modulus Studies of LiMn_2O_4 cathode films grown by RF magnetron sputtering

机译:射频磁控溅射生长LiMn_2O_4阴极膜的交流电,介电和电模量研究

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摘要

Spinel LiMn_2O_4 (LMO) thin films were deposited on Ti/silicon (Si) (100) substrate at ambient temperature by RF magnetron sputtering method. All the grown thin films were post-annealed up to 500 °C, in the presence of oxygen to enrich the crystallinity of the thin film. XRD and Raman results showed the formation of the cubic spinel structured LMO thin film annealed at 500 °C. AFM micrographs of LMO thin films reveal the surface morphology and roughness modifications. The ac conductivity, dielectric constant (s'), and electric modulus (M") for the as-deposited and post-annealed LMO thin films were evaluated by analyzing measured impedance data as a function temperature in the frequency range of 100 Hz to 10 MHz.
机译:在室温下,通过射频磁控溅射法将尖晶石LiMn_2O_4(LMO)薄膜沉积在Ti /硅(Si)(100)衬底上。在氧气存在下,将所有生长的薄膜后退火至500°C,以丰富薄膜的结晶度。 XRD和拉曼结果表明,在500℃退火的立方尖晶石结构的LMO薄膜的形成。 LMO薄膜的AFM显微照片显示了表面形态和粗糙度变化。沉积和退火后的LMO薄膜的ac导电率,介电常数(s')和电模量(M“)通过在100 Hz至10频率范围内将测量的阻抗数据作为函数温度进行分析来评估兆赫

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