Lateral charge migration suppression of 3D-NAND flash by vth nearing for near data computing

摘要

Vth Nearing is proposed to suppress the lateral charge migration and to improve the reliability of 3D TLC NAND flash. By modulating the write data so that V_th of adjacent cells become close, the data-retention errors decrease by 40%. The acceptable data-retention time increases by 2.8-times. The proposal is implemented in the SSD controller for the near data computing.