Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications

摘要

In this paper, the properties and performance evaluation of a novel ultra wide band gap device using Ga₂O₃ material is presented. Although Ga₂O₃ device is currently at its early development stage, the material and existing devices have shown tremendous potential in high power applications. The properties of Ga₂O₃ based on both theoretical limits and state-of-the-art prototypes for high power applications are discussed. TCAD and SPICE models are used to extract device parameters and to characterize static and switching performances. A three phase modular multilevel converter model is then established to calculate power losses at different operating conditions. Quantitative comparison between Ga₂O₃ and SiC devices is presented.