An investigation of program disturb characteristics and data pattern effect in 128G 3D NAND flash memories

机译：128G 3D NAND闪存中程序干扰特性和数据模式效应的研究

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This work investigates program disturb characteristics on cells closely packed in three-dimensional (3D) NAND flash memories. Using firmware accessing 3D NAND chips, experimental data reveal unique behaviors on the cells susceptible to program disturb. These observations provide guidelines for future optimization in data arrangement and array operations in 3D NAND arrays.

机译：这项工作调查了在三维（3D）NAND闪存中紧密包装的细胞上的程序干扰特征。使用固件访问3D NAND芯片，实验数据会显示易受编程干扰的细胞上的独特行为。这些观察结果提供了在3D NAND阵列中的数据排列和阵列操作中的未来优化指导方针。

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《International Symposium on VLSI Technology, Systems and Applications》|2017年|1-2|共2页
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作者
Yu-Hung Yeh; Sheng-Hung Shih; Jen-Chien Fu; Chrong-Jung Lin; Ya-Chin King;
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关键词
Three-dimensional displays; Flash memories; Arrays; Stress; Delays; Microprogramming;

机译：三维显示器;闪存;阵列;应力;延迟;微编程;

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专利

1. Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell V-TH Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs) [J] . Teruyoshi HATANAKA, Mitsue TAKAHASHI, Shigeki SAKAI, IEICE Transactions on Electronics . 2011,第4期

机译：通过针对高可靠性和低功耗企业固态硬盘（SSD）的铁电（Fe）-NAND闪存存储器的存储单元V-TH优化，改善了读取干扰，程序干扰和数据保留
2. A New Programming Scheme for the Improvement of Program Disturb Characteristics in Scaled nand Flash Memory [J] . Shirota R., Huang C.-H., Nagai S., Electron Devices, IEEE Transactions on . 2012,第10期

机译：改进可缩放NAND闪存程序干扰特性的新编程方案
3. Program Disturb Research and Error Avoidance Algorithm Design of 3D-TLC NAND Flash Memory [J] . Xiaoshan Yang, Ligu Zhu, Qicong Zhang, International Journal of Performability Engineering . 2018,第8期

机译：3D-TLC NAND闪存的程序干扰研究与避免避免算法设计
4. An Investigation of Program Disturb Characteristics and Data Pattern Effect in 128G 3D NAND Flash Memories [C] . Yu-Hung Yeh, Sheng-Hung Shih, Jen-Chien Fu, International Symposium on VLSI Technology, Systems and Applications . 2017

机译：128G 3D NAND闪存中计划干扰特征及数据模式效应的调查
5. Circuits and systems for solid-state data storage using highly scaled NAND flash memory. [D] . Zhao, Kai. 2014

机译：使用大规模NAND闪存的固态数据存储电路和系统。
6. Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [O] . Min Huang, Zhaoqing Liu, *, 2014

机译：非对称编程：基于MLC NAND闪存的传感器系统的高度可靠的元数据分配策略
7. Adaptive Pulse Programming Scheme for Improving the Vth Distribution and Program Performance in 3D NAND Flash Memory [O] . Zhichao Du, Shuang Li, Yu Wang, 2021

机译：自适应脉冲编程方案，用于提高3D NAND闪存中的Vth分布和节目性能

An investigation of program disturb characteristics and data pattern effect in 128G 3D NAND flash memories

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