A steep slope Phase-FET based on 2D MoS2 and the electronic phase transition in VO2

摘要

Two-dimensional materials are being investigated for potential nanoelectronic applications such as transistors for scaled technology nodes. Here we investigate the possibility of further augmenting the performance of such 2D materials through a novel device concept known as the hybrid-phase transition FET or Phase-FET. The MoS based Phase-FET incorporates an insulator-to-metal transition material VO integrated in series with the source of a MOSFET, which provides an internal amplification across the insulator-to-metal transition and results in steep slope switching.