Surface activated bonding of Nb-Nb for surperconducting device interconnect

机译：用于行驶装置的NB-NB的表面活化键合互连

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Deposited Nb wafers were bonded directly by surface activated bonding method at room temperature. In this research, several criteria for bonding has been investigated: Surface roughness should be less then Ra = 1.0 nm, and etching time is 50 s or more.

机译：沉积的Nb晶片通过在室温下通过表面活性粘合法直接键合。在本研究中，已经研究了粘合的若干标准：表面粗糙度应小于Ra = 1.0nm，并且蚀刻时间为50秒或更高。

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《International Conference on Electronics Packaging》|2021年|21-22|共2页
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Yuta Takahashi; Masahisa Fujino; Takashi Matsumae; Hiroshi Nakagawa; Katsuya Kikuchi; Tohru Taino;
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Superconducting devices; Performance evaluation; Radiation effects; Three-dimensional displays; Surface roughness; Etching; Rough surfaces;

机译：超导装置;性能评估;辐射效应;三维显示器;表面粗糙度;蚀刻;粗糙表面;

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专利

1. Bumpless Interconnect Through Ultrafine Cu Electrodes by Means of Surface-Activated Bonding (SAB) Method [J] . Akitsu Shigetou, Toshihiro Itoh, Mie Matsuo, IEEE Transactions on Advanced Packaging . 2006,第2期

机译：通过表面活化键合（SAB）方法通过超细铜电极实现无凸点互连
2. Bumpless Interconnect of Ultrafine Cu Electrodes by Surface Activated Bonding (SAB) Method [J] . Akitsu Shigetou, Toshihiro Itoh, Tadatomo Suga Electronics and Communications in Japan. Part 2, Electronics . 2006,第12期

机译：通过表面活化键合（SAB）方法实现超细铜电极的无凸点互连
3. High-quality InP/SOI heterogeneous material integration by room temperature surface-activated bonding for hybrid photonic devices [J] . Wang Yuning, Nagasaka Kumi, Mitarai Takuya, Japanese journal of applied physics . 2020,第5期

机译：高质量的InP / SOI异质材料通过室温表面活性粘接用于混合光子器件
4. Low temperature interconnect technology using surface activated bonding (SAB) method [C] . Suga T. Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International . 2005

机译：使用表面活化键合（SAB）方法的低温互连技术
5. Fast and Scalable Fabrication of Microscopic Optical Surfaces and its Application for Optical Interconnect Devices [D] . Summitt, Christopher Ryan. 2017

机译：微观光学表面的快速和可伸缩的制造及其用于光学互连装置的应用
6. A Simple Low-Temperature Glass Bonding Process with Surface Activation by Oxygen Plasma for Micro/Nanofluidic Devices [O] . Koki Shoda, Minori Tanaka, Kensuke Mino, 2020

机译：一种简单的低温玻璃键合工艺具有用于微/纳米流体装置的氧等离子体的表面活化
7. A Simple Low-Temperature Glass Bonding Process with Surface Activation by Oxygen Plasma for Micro/Nanofluidic Devices [O] . Koki Shoda, Minori Tanaka, Kensuke Mino, 2020

机译：一种简单的低温玻璃键合工艺，具有用于微/纳米流体装置的氧等离子体的表面活化
8. Activation of Chemical Bonds at Surfaces [R] . Yates, J. T. 1992

机译：表面化学键的活化

Surface activated bonding of Nb-Nb for surperconducting device interconnect

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